The Effects of SEM Imaging on Thin Layer MoS2 and MoSe2
Presentation Type
Poster
Keywords
TMDs, Monolayer, MoS2, MoSe2, SEM, Crystal, voltages, atomic
Department
Physics
Major
Physics
Abstract
Monolayer Transition Metal Dichalcogenides(TMD’s) are atomically thin semi-conductors that are considered quasi 2D materials due to their large aspect ratio. Atomically thin crystals exhibit different physical properties than their bulk counterparts due to quantum confinement effects. This has given rise to an increased interest in thin layer materials over the last decade. In this work, the effect of Scanning Electron Microscopy(SEM) on thin layer MoS2 and MoSe2 is explored. Raman spectroscopy measurements show a broadening of the Raman peaks after exposure to the SEM’s electron beam. This broadening is indicative of crystal defects caused by the interaction between the electron beam and the TMD crystals. Different accelerating voltages are investigated in order to see the magnitude of their effects on the crystal structure. We theorize that these defects will cause an adverse effect in the electrical properties of stacked TMD’s.
Faculty Mentor
Dr. John Mann
Funding Source or Research Program
Academic Year Undergraduate Research Initiative
Location
Waves Cafeteria
Start Date
23-3-2018 2:00 PM
End Date
23-3-2018 3:30 PM
The Effects of SEM Imaging on Thin Layer MoS2 and MoSe2
Waves Cafeteria
Monolayer Transition Metal Dichalcogenides(TMD’s) are atomically thin semi-conductors that are considered quasi 2D materials due to their large aspect ratio. Atomically thin crystals exhibit different physical properties than their bulk counterparts due to quantum confinement effects. This has given rise to an increased interest in thin layer materials over the last decade. In this work, the effect of Scanning Electron Microscopy(SEM) on thin layer MoS2 and MoSe2 is explored. Raman spectroscopy measurements show a broadening of the Raman peaks after exposure to the SEM’s electron beam. This broadening is indicative of crystal defects caused by the interaction between the electron beam and the TMD crystals. Different accelerating voltages are investigated in order to see the magnitude of their effects on the crystal structure. We theorize that these defects will cause an adverse effect in the electrical properties of stacked TMD’s.