I-V Characteristics of Vertically Grown Mono-layer Molybdenum Disulfide

Presentation Type

Poster

Keywords

Thin Film MoS2 n-type field effect transistors electrical characterization low current measurements

Major

Physics

Abstract

In this study, two-probe low current I-V measurements are performed on vertically grown mono-layer molybdenum disulfide. Voltage sweeps from -5V to 5V suggest an n-type device, producing currents in the range of tens of nanoamps. These results, however, are inconsistent, likely due to the sensitivity of mono-layer molybdebum disulfide's resistance to surface contamination from water vapor.

Faculty Mentor

John Mann

Funding Source or Research Program

Not Identified, Academic Year Undergraduate Research Initiative

Location

Waves Cafeteria

Start Date

24-3-2017 2:00 PM

End Date

24-3-2017 3:00 PM

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Mar 24th, 2:00 PM Mar 24th, 3:00 PM

I-V Characteristics of Vertically Grown Mono-layer Molybdenum Disulfide

Waves Cafeteria

In this study, two-probe low current I-V measurements are performed on vertically grown mono-layer molybdenum disulfide. Voltage sweeps from -5V to 5V suggest an n-type device, producing currents in the range of tens of nanoamps. These results, however, are inconsistent, likely due to the sensitivity of mono-layer molybdebum disulfide's resistance to surface contamination from water vapor.