I-V Characteristics of Vertically Grown Mono-layer Molybdenum Disulfide
Presentation Type
Poster
Keywords
Thin Film MoS2 n-type field effect transistors electrical characterization low current measurements
Major
Physics
Abstract
In this study, two-probe low current I-V measurements are performed on vertically grown mono-layer molybdenum disulfide. Voltage sweeps from -5V to 5V suggest an n-type device, producing currents in the range of tens of nanoamps. These results, however, are inconsistent, likely due to the sensitivity of mono-layer molybdebum disulfide's resistance to surface contamination from water vapor.
Faculty Mentor
John Mann
Funding Source or Research Program
Not Identified, Academic Year Undergraduate Research Initiative
Location
Waves Cafeteria
Start Date
24-3-2017 2:00 PM
End Date
24-3-2017 3:00 PM
I-V Characteristics of Vertically Grown Mono-layer Molybdenum Disulfide
Waves Cafeteria
In this study, two-probe low current I-V measurements are performed on vertically grown mono-layer molybdenum disulfide. Voltage sweeps from -5V to 5V suggest an n-type device, producing currents in the range of tens of nanoamps. These results, however, are inconsistent, likely due to the sensitivity of mono-layer molybdebum disulfide's resistance to surface contamination from water vapor.